By Sadao Adachi
Knowledge of the refractive indices and absorption coefficients of semiconductors is principally import within the layout and research of optical and optoelectronic units. The decision of the optical constants of semiconductors at energies past the elemental absorption part can be recognized to be a strong manner of learning the digital energy-band constructions of the semiconductors. the aim of this e-book is to provide tabulated values and graphical info at the optical constants of the preferred semiconductors over the full spectral variety. This publication provides info at the optical constants of crystalline and amorphous semiconductors. an entire set of the optical constants are awarded during this publication. they're: the advanced dielectric consistent (E=e.+ieJ, complicated refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor fabrics thought of during this e-book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the spouse booklet "Optical homes of Crystalline and Amorphous Semiconductors: fabrics and primary ideas" necessary because it emphasizes the fundamental fabric houses and primary prinCiples.
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Additional resources for Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information
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Woronick et al. I 102 103 104 Photon energy (eV) Figure A2·3 Extinction coefficient k as a function of photon energy for Si in the 10-4000eV spectral region taken from Edwards , Windt et al. , Yanagihara et al. , and Woronick et al. . The vertical arrows indicate the absorption thresholds at the L-z,3 and K edges. A2 SILICON (Si) 23 roughness is larger for shorter wavelength. This is expected as the effect of surface roughness that becomes conspicuous as the wavelength of light approaches the scale of the surface height.
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