By Steven E. Laux, Massimo V. Fischetti (auth.), Karl Hess (eds.)
Monte Carlo simulation is now a good proven approach for learning semiconductor units and is very like minded to highlighting actual mechanisms and exploring fabric houses. now not strangely, the extra thoroughly the cloth homes are outfitted into the simulation, as much as and together with using a whole band constitution, the extra strong is the tactic. certainly, it's now changing into more and more transparent that phenomena resembling reliabil ity similar hot-electron results in MOSFETs can't be understood satisfac torily with out utilizing complete band Monte Carlo. The IBM simulator DAMOCLES, accordingly, represents a landmark of significant importance. DAMOCLES sums up the full of Monte Carlo gadget modeling event of the earlier, and reaches with its functions and possibilities into the far-off destiny. This publication, accordingly, starts off with an outline of the IBM simulator. the second one bankruptcy provides a sophisticated creation to the actual foundation for Monte Carlo simulations and an outlook on why complicated results similar to collisional broadening and intracollisional box results could be very important and the way they are often integrated within the simulations. References to extra uncomplicated intro the booklet. The 3rd bankruptcy ductory fabric are available all through describes a regular courting of Monte Carlo simulations to experimental information and exhibits a big trouble, the massive variety of deformation poten tials required to simulate delivery through the whole Brillouin sector. The fourth bankruptcy addresses attainable additional extensions of the Monte Carlo method and subtleties of the electron-electron interaction.
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Additional info for Monte Carlo Device Simulation: Full Band and Beyond
For small q, P(q) is the dipole polarization set up by the optical phonon mode in the crystal. For larger q P(q) acquires higher order poles (quadrupole polarization, etc. ). We are only interested in the small q limit for polar optic phonon scattering, so for these purposes, P(q) ~ Pdipole. Fortunately, the dipole polarization associated with a long wavelength mode is easily calculated from a self-consistent, first order lattice dynamics theory. The result is that , q . Pdipo/. A eL l' ·q = -0-- (75) where eL is the effective dipole charge associated with a longitudinal optical phonon and l' is the ionic displacement.
Then the magnitude of Ie can be transformed into an integral over final energy EJ by use of the transformation, die' = dE (1 + 2o:EJ )m* J 1i 2 Ie' (83) If the masses are unequal, the Herring-Vogt transformation is useful because it maps the problem into a "starred-space" which has a spherical E(Ie) relation : (84) The problem is then solved in the "starred-space" and then transformed back to the physical space. As far as total scattering rates are concerned, this only has the effect of replacing m* in the result by mD == (m",mymz )1/3.
Baccarani, "A New Discretization Strategy of the Semiconductor Equations Comprising Momentum and Energy Balance", IEEE Trans. , vol. 7, p. 231-242, February 1988. A longer sampling of groups working on these approaches can be found in the references contained in . M. V. Fischetti and S. E. Laux, "Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects", Phys. Rev. B, vol. 38, p. 9721-8745,1988. S. E. Laux and M. V. , vol. EDL-9, p.