By T. S. Moss

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Extra info for International Conference on Infrared Physics (CIRP). Proceedings of a Conference Held in Zurich, 11–15 August 1975

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Sputtering. Single crystal and polycrystalline Pb^Snj^Te and PbTe films have been investigated in the course of developing bidimensional detector arrays. Polycrystalline photoconductive detectors with exceptional responsivity and detectivity values have been obtained by means of reactive sputtering of PbTe and Pb^Sn^^Te layers in an oxygen-tellurium-argon plasma atmosphere. This technique has allowed us to control the impedance and time constant values of the detectors in a very wide range just controlling the oxygen content in the gaseous sputtering plasma.

A In steradian field of view at 295° background temperature have been obtained (Fig. 11). Interesting results have been found also in heterostructure photodiodes for the speed of response: response times lower than 10 nsec have been measured with a GaAs diode laser source emitting at 0-84 μπι. This response time is determined by the RC electrical time constant and not by the intrinsic heterojunction response which is much shorter: the limit of the response speed of this type of detectors should be checked in smaller diode areas but it cannot be actually measured owing to the limits of the detector equipment operating in our laboratory.

Mat. Sei. 8, 1737 (1973). 9. 10. 11. 12. HISCOCKS, S. E. R. J. Cryst. Growth 17, 222 (1972). ROGERS, C. J. Int. Conf. on Narrow Gap Semiconductors and Semimetals, Nice (1973). Moss, T. S. Proc. Phys. Soc. B67, 775 (1954). , Phys. Rev. 93, 632 (1954). 13. MELNGAILIS, I. & T. C. HARMAN, Semiconductors and Semimetals, Edited by R. K. WILLARDSON and A. C. BEER Vol. 5, pp. 111. Academic Press, New York (1970). 14. ELLIS, B. Int. Conf. on Narrow Gap Semiconductors and Semimetals, Nice (1973). 15. HYLIANDS, M.

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